A 0.5–3 GHz 1-Watt High Efficiency GaAs pHEMT Power Amplifier

A 0.2–3 GHz 0.15 μm GaAs pHEMT power amplifier (PA) is designed and verified in this paper. The broadband power performance and wideband power gain can be achieved by employing a 2-parallel 2-stacked-FETs and RC feedback circuit. The circuit can achieve output power of 1-watt and power added efficiency of 33–39% during 0.2–3 GHz at the biased drain voltage of 12V. Meanwhile, the measured results show that its flat gain (S
21
) is 23±1 dB, the maximum input return loss (S
11
) is -20 dB and the maximum output return loss (S
22
) is -25 dB, the chip size is about 2.9 mm
²
.