High Power and High Efficiency S-Band 300W GaN HEMT For Space Applications

This paper describes the development of an high performance internal matching power device for S-band satellite GaN on SiC substrate. Two 25.08 mm gate width devices and ceramic chip input and output matching circuits are integrated in a 17.4 mm × 24 mm package. The developed S-band GaN HEMT has an output power of more than 300W at 2.9-3.3GHz, a power gain of more than 14dB and a maximum PAE of 75% at 32V drain voltage, 100μs pulse width and 10% duty cycle bias, and achieves excellent circuit performance. Its RF thermal resistance is not more than 0.2 ° C /W. This is the first time that GaN power devices for satellites above 300W have been reported in S-band.