Proposal for advanced devices analysis using 930nm light source and GaAs SIL

In recent years, the design rules of LSIs (large Scale Integrated circuit) have become finer and finer, and the resolution of infrared light has become insufficient. For this reason, wavelengths shorter than the absorption edge of Si are being used for analysis, and it is important to make the Si substrate thinner to use this wavelength. The success rate of this method is very important for the success rate of the analysis. In this paper, we propose a method of minimizing this thinning with 930 nm incoherent light source and improving the resolution to a level close to that of visible light. This also prevents the fringes of the image, eliminate location dependency of the EOP waveform amplitude and realizes a good analysis.