Performance Analysis of InAs0.98N0.02/AlPxSb(1-x) Quantum Dot Intermediate Band Solar Cell

Recently, quantum dot intermediate band solar cell (QDIBSC) becomes increasingly popular among researchers due to the low efficiency of different types of first and second-generation solar cells. QDIBSC can produce high efficiency by utilizing photons having energy lower than the bandgap energy of absorber material. Power conversion efficiency (PCE) of QDIBSC depends on intermediate bands (IBs) position and width. IBs number, position and width again depend on quantum dot (QD) size, barrier material content, interdot distance. In this numerical analysis to illustrate the position, number and width of the IBs were determined by resolving the time-independent Schrödinger wave equation with the help of the Kronig-Penney model. In this part of work, the effect of multi IBs on PCE of InAs
0.98
N
0.02
/AlP
x
Sb
(1-x)
QDIBSC was theoretically investigated and maximum efficiency was found to be 63.12% for three IBs, 51.91% for two IBs and 3S.SS% for the single intermediate band for a certain QD size, phosphorus content and interdot distance.