Displacement Damage Effects in Backside Illuminated CMOS Image Sensors

Displacement damage effects in backside illuminated CMOS image sensors (BSI CISs) are investigated. Several BSI CISs with distinct epitaxial layer thicknesses are irradiated by several protons and neutrons to study the influence of technology parameters and radiation parameters on the radiation response of these imagers. A significant degradation in quantum efficiency (QE) is observed for thick epitaxial layer at the absorbed dose of 1230 TeV/g. Dark-current damage factor of 0.141
$\text{e}^{-}\cdot \text {s}^{-{1}}\cdot {\mu } \text {m}^{-{3}}\cdot \text {(TeV/g)}^{-{1}}$
is determined in BSI CIS. The influence of particle types, particle energy, and radiation fluence on dark current distributions is presented at the same displacement damage dose (DDD). Dark current random telegraph signal (DC-RTS) is reported and the variation in epitaxial layer thickness has no influence on DC-RTS behavior. This work highlights the relationship between key parameters and DDD: the limiting factors of the imager performance are single pixel [hot pixel and random telegraph signal (RTS) pixel] at a low DDD range, mean dark current and single pixel at a medium DDD range, and mean dark current in the high DDD case, respectively.