An FR4-Based K-Band 1.0-dB Noise Figure LNA Using SISL Technology

This letter presents an ultralow noise
$K$
-band low-noise amplifier (LNA) using substrate integrated suspended line (SISL) technology. A simplified, purely distributed parameter matching network is utilized for simultaneous noise and impedance matching. Different from standard chip-level circuits, a
$K$
-band LNA based on board-level platform with low-cost FR4 is proposed. Using the high-
$Q$
value of the SISL platform, this LNA shows the advantages of high-power gain, ultralow noise, and self-packaging. According to the measurement, the proposed LNA achieves a 27.7-dB small signal gain with 2.4-GHz 3-dB bandwidth (25–27.4 GHz) and noise figure (NF) of 1.0 dB with 20-mW power dissipation.