Impact of SiO2 Isolation in Ge/Si Tunnel Field Effect Transistors

The aggressive scaling of MOS devices has transcended the micrometer scale into the nanometer scale. Today’s technology needs new and novel device designs that use carrier transport which achieves lower subthreshold swing (SS) and simultaneously suppresses the short channel effect (SCEs). The drain current and SS is important parameters for better performance of the device. When the oxide segregation is used between channel and drain, the device performance is enhanced. In this paper, different device characteristics includingdrain current, ${\mathrm {I_{ON}/I_{OFF}}}$ (current) ratio, and SS is studied. The proposed TFET device exhibits high drain current of 3x10
⁴
Aas well as current ratio of $\sim 10 ^{11}$. The enhanced SS is observed as 30 mV/dec.