Effect of Interface Modification Conditions on Electrical Characteristics and Device Consistency of Organic Thin Film Transistors

In this letter, organic thin-film transistors (OTFTs) with various interface modification conditions are fabricated and characterized. In addition to chemically homogeneous dielectric surfaces to enhance electrical characteristics of devices, morphologically homogeneous surfaces are also needed to achieve good device-to-device uniformity of OTFTs. The different charge trap densities at the dielectric interface and in pentacene film is responsible.