Degradation Behaviors in InAs Quantum Dot Lasers on Silicon using Misfit Dislocation Trapping Layers

InAs quantum dot lasers on silicon using misfit dislocation trapping layers show 400-fold improvement in lifetime at 80°C (failure criterion: 50% initial peak power). Trapped misfit segments show no evidence of recombination enhanced dislocation climb, leading to an order of magnitude reduction in its extent.