Waveguide-Coupled Ge Photodiodes with 3-dB Bandwidth ≥110 GHz

We present a photodiode construction in which germanium is sandwiched in between complementary in-situ doped silicon layers. With this new approach we demonstrate photodiodes with optoelectrical 3-dB bandwidth of 110 GHz and responsivity of 0.6 A/W at 1550 nm, obtained at reverse bias of 2 V.