Simulation-based DRAM Design Technology Co-Optimization: Why Random Dopant Fluctuations Matter

This paper presents a TCAD-based analysis of DRAM retention time variability. Both statistical and process-induced variability are considered. We highlight that discrete dopant fluctuations play a fundamental role in determining the leakage trends across the space of process variations and, therefore, they should be taken into account for an accurate and physics-based evaluation of yield and reliability of ultra-scaled DRAMs.