Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell

In this work we report the development of a macro-compact model of the one-transistor (1T) bipolar SRAM Cell based on an equivalent circuit representation. The compact model consists of a combination of MOSFET, BJT, and other passive components. We start with calibration of the TCAD deck using experimental data and realize the operation of the 1T SRAM cell. Then we calibrate the different components of the SPICE compact model using TCAD simulation results at the 28 nm technology node. Finally, we show a comparison of the full switching sequence obtained from TCAD and SPICE simulations demonstrating the validity of the compact model.