Evaluation of FINFET And Nanowire MOSFET With High K Dielectric

As the dimensions of the transistors are shrinking below, nanometers regime play a vital role in researches. Scaling allows for the packaging of over a million transistors on a single chip.The constant performance development of MOSFETs (Metal Oxi de Field Effect Transistors), which has contributed to the semico nductor industry's success, is based on the downscaling of an integrated circuit's basic component. Advances in manufacturing technology and gate control in transistors leads to increasing usage of Finfets(Fin Field Effect Transistor). A version of MOSFET is a FINFET., which is a multigate device. In this work, a FinFET device with cylindrical gate all around structure has been designed using nanohub tool with different high k dielectrics (Hfo2 -dielectric constant 25,Al2o3-dielectric constant 9 ) and also analyzed for nanowire with high k dielectrics(Hfo2 -dielectric constant 25,Al2o3-dielectric constant 9).Further, At various channel lengths, the gate oxide thickness is altered and analyzed.