Simulation and Modelling of Resonant Tunneling Diode Peak Voltage Dependence on Spacer Layers

A set of designed experiments are used to study the effects of the resonant tunneling diode (RTD) spacer layers parameters on the peak output voltage. The results are mathematically modelled based on physical interpretations. The built-in potential resulting from doping gradients between the emitter and collector along with the location of the Fermi-energy and the conductance of the collector are found to play a key role in the location of the peak. The thicknesses of both the emitter and collector regions influence the peak voltage up to a particular characteristic length which is found to be linked to the Thomas-Fermi screening length in the emitter and the Debye length in the collector.