Application of Template Models for Current-Voltage Characteristics Approximation of Complementary MOSFETs

The features of template models application for approximation of current-voltage characteristics (CVC) of complementary MOSFETs have been considered. The MOSFETs analyzed in this paper are designed for low-noise amplifiers (LNA), which are used in the output circuits of submillimeter-wave detectors installed on astronomical satellites and radio telescopes. A template model can be obtained using fractional-rational functions of control voltages. In this paper we have compared the relative errors of complementary MOSFETs CVC approximation for known and template models. It is shown that the template models allow decreasing the RMS error of CVC approximation in 1.5 -2 times in comparison with corresponding physical models for p-channel and n-channel MOSFETs. The accuracy of a template model will be higher for more accurate initial physical model.