Rectangular Gate-All-Around Nanowire FET (RGAANFET) Based Oxygen Sensor

This work proposes the oxygen sensing by an Electrostatic Charge Plasma (E-CP) based Rectangular Gate All Around NWFET (Nanowire Field Effect Transistor), RGAANFET. We have used Silver as the gate metal to due to its reactivity towards the gas and IGZO as the material for channel. The gas sensing has been done by studying the variations (due to the presence of gas) in the different parameters of the RGAANFET. Gas presence has been simulated by the variation of the work function of the metal gate. We have also tried to record the effect over sensitivity due to various factors like dielectric and distinct lengths of channel. We have made the device more efficient than the last proposed devices.