300 Mbps level converters for 0.5 V system LSIs using FD/PD-SOI technology

The paper clarified the performance of dual-rail level converters suitable for 0.5V-operating LSIs, through experiments of FD/PD-SOI devices. The level converter using an 0.35/spl mu/m multi-Vt SOI CMOS device operated with 4-nsec in the 0.5V-to-1.2V conversion. In the level converter fabricated using the 0.25/spl mu/m PD-SOI CMOS process, it was shown that the dual-rail scheme allowed more marginal Vt-design. Furthermore, the fabricated device achieved the maximum data rate of 300Mbps in the 0.5V-to-1.5V conversion.