Exploitation of volume inversion in optimal DG MOSFET design

Based on the variational approach, an analytical quantum-effects model for symmetrical DG MOSFETs of arbitrary Si-film thickness has been developed and used to give a design criterion for the exploitation of volume inversion for enhanced carrier mobility. Reference to Monte Carlo simulations of the carrier transport supported the modeling. The work focused on symmetrical DG devices, but the insight gained can be useful for near-symmetrical devices as well.