SiGe-On-Insulator (SGOI): substrate preparation and MOSFET fabrication for electron mobility evaluation

Relaxed Si/sub 1-x/Ge/sub x/-on-insulator (SGOI) is a very promising technology, as it combines the benefits of two advanced technologies: the conventional SOI technology and the SiGe technology. SiGe-based devices have shown advantageous DC and RF performance using, the enhanced electronic properties associated with strain engineering and heterojunction energy barriers. SGOI is a versatile substrate that can be used to integrate various device structures, such as strained-Si and strained-SiGe FETs, and III-V optoelectronics. In this work, we have fabricated SGOI substrates via two different approaches. We also demonstrate strained-Si nMOSFET fabrication on SGOI and electron mobility enhancement is evaluated.