Nano-scale silicon MOSFET: towards non-traditional and quantum devices

Nano-scale silicon MOSFETs with narrow wire channels on SOI substrates are presented. The triangular wire MOSFET can suppress the short channel effect more than double-gate and single-gate SOI MOSFETs. The wire channel MOSFETs narrower than 10 nm exhibit quantum confinement effects at room temperature. New device engineering using quantum effects is also discussed.