Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT

This paper presents for the first-time a physics-based non-linear large signal model for Ka-band GaN power amplifier design using the new industry standard ASM-HEMT compact model. A novel methodology combining the effectiveness and accuracy of modeling the intrinsic device region with ASM-HEMT, and distributed effects at Ka-band with electromagnetic (EM) simulations is developed. The intrinsic semiconductor region for each finger of the GaN HEMT device is modeled with ASM-HEMT, and in a multi-finger device, the single finger model is coupled with EM simulations capturing distributed effects accurately. The developed non-linear model shows excellent accuracy with measured non-linear data for a commercial GaN-HEMT device, and with measurements performed on a Ka-band MMIC power amplifier.