A 5G mm-Wave Single Chip 8-channel FEM with Best-in-class 22% Power Efficiency and Embedded Die Substrate (EDS) Technology

This paper describes a fully integrated 8-channel front-end module (FEM) single chip IC fabricated with 45-nm RFSOI CMOS process technology for 5G mm-Wave application supporting n257/258/261 triple bands. Its silicon area is 4.29mm × 2.76mm which is comprised of high efficiency Doherty topology power amplifier, low noise amplifier, T/Rx switch, MIPI interface controller and so on. To address module assembly area limitation on the mm-wave antenna PCB, an ultra-thin Embedded Die Substrate (EDS) package is adopted and realizes virtually Zero-space integrate the FEM die in the middle of PCB. The average output power of the Tx is 17dBm with 22% PAE at 5.9% EVM and Rx NF is 3.4dB at the 27GHz.