A Full Ka-band Highly Linear Efficient GaN-on-Si Resistive Mixer

In this paper, we present a highly linear balanced IQ resistive mixer implemented in a 100-nm GaN HEMT on a silicon substrate that covers the whole Ka-band. The mixer achieves an input third-order intercept point (IIP3) of 30 dBm with only 10.5 dBm of LO input power at 35 GHz which means a record linear efficiency of 20 dB. The Measured 1-dB input compression point was 15 dBm at 34 GHz. The mixer shows a better than 10 dB conversion loss over the entire Ka-band.