Impact of Low Frequency Noise Source over Tunnel Field Effect Transistor in Nano Regime

As the device shrinks in nano regime the characteristics degrades. The device characteristics depends upon so may factors associated with device internally as well as externally. In semiconductor devices noise is an important parameter in terms of device functionality in nano regime. In this paper, we discussed the impact of low frequency noise sources on Tunnel FET device. The detail discussion has been done for the random telegraph noise, and flicker noise for TFET. In nano regime with accurate selection of device dimension it is observed that the sub threshold swing can be obtained below 60mV/decade with constant low frequency noise.