Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells

A new low-dimensional system consisting of a highly tensile strained Germanium quantum well (QW) was epitaxially grown on Si wafers using GeSn as barriers. The thickness of the well was modulated from 12.5nm, down to 1.5nm, whereas the tensile strain was increased from 1.1% to 1.67%. Infrared spectroscopic ellipsometry was used to investigate the optical activity of the QWs.