Electrically Injected GeSn Laser on Si Operating up to 110K

We demonstrated electrically injected GeSn laser with the threshold to as low as 353 A/cm
²
at 10 K. The threshold reduction was achieved by introducing a thicker SiGeSn cap, eliminating the optical loss from the top metal contact. The peak power was measured as 2.75 mW/facet at 10 K. At 110 K, the emission peak is at 2604 nm.