Thyristors with an Integrated Element Optimized for Protection Against Overvoltage Impulses with a Low Rate of Rise

This article discusses safe switching of a protective element integrated into a power thyristor in the form of a four-layer dynistor structure with a reduced avalanche breakdown voltage for protection against overvoltage impulses with low rate of rise. This paper proposes criteria allowing to optimize the topology of the cathodic shunting of the protective element to ensure its safe switching, and presents the results of experiments confirming the safe switching of the protective elements with an optimized topology.