Characterization of Enhancement-Mode Asymmetrical GaN Transistor Half Bridge in High Frequency Operation

In this paper, an enhancement-mode asymmetrical GaN transistor half-bridge fabricated on 200mm GaN-on-SOI substrate is analysed, and the performance at 1 MHz and 2MHz switching frequency is evaluated. Comparisons with symmetrical commercial GaN transistor half-bridge under the same operation are made. The benefits of optimized selections of the high-side and low-side devices are discussed. By choosing an optimized high-side device, a higher slew rate with an acceptable overshoot voltage is achieved.