Fabrication and Characterization of Heterojunction Based on a Copper Oxide Layer

Copper oxide films were obtained using the method of pulsating spray pyrolysis on glass substrates and substrates with an ITO sublayer. Their morphological and structural characteristics, as well as current-voltage characteristics of the n-ITO / p-CuO / Ag heterojunction, were studied. Electrical measurements indicate the diode nature of the current-voltage characteristic of the fabricated structure. The calculations of the main electrophysical parameters of the heterojunction are carried out and the mechanisms of current transfer were determined. The resulting heterojunctions are promising for the creation of photovoltaic devices, such as solar cells and photodetectors, as they can reduce production costs due to the low cost of materials and cheap method of their production.