Self-heating Effects Measured in Fully Packaged FinFET Devices

A unique, resource efficient method for finding the impact of Self-heating Effects (SHE) in packaged FinFET devices is presented in this work. Device level concerns seen in reliability degradation and system level issues with power dissipation are inspected using separate measuring techniques. We show that a frequency effect observed in reliability is attributed to self-heating of the Fins during device transition. The increase in temperature due to current induced self-heating was measured up to 1 GHz and extrapolated to 3 GHz. Temperature rise of the total chip caused by dynamic power dissipation is evaluated. The self-heating contribution is assessed by finding the relative thermal offset from increased frequency compared to that of added logic. A significant correlation is revealed from evaluating the device and system level studies. The method can be easily performed on smaller dimension nodes where the effects of SHE are more acute.