One-way Sensitivity Analysis of the Quasi-static Memdiode Model for RRAM Devices

In this work, we assess the impact that changes in the parameters of the quasi-static memdiode model (QMM) for RRAM devices will have on the simulated conduction characteristics. Sensitivity analysis is recognized as the most important technique for identifying which parameters are key drivers of the model's results. The model's reference parameters are extracted first from a typical (median) experimental I- V curve of an electroformed Hf02-based metal-insulator-metal (MIM) structure. Then one parameter is changed at a time (so-called univariate or one-way analysis) in the LTSpice script and the variation of some selected observables recorded. Special attention is paid to the voltage span-induced sensitivity effect.