COMSOL Model of a Three-Gate Junctionless Transistor

A 3D model of silicon three gate nanowire junctionless transistor is developed in COMSOL Multiphysics. It is based on Gummel approach with Green's functions. The model describes output I- V characteristics. Modeling results are verified against reference experimental data with average accuracy of 11 %. Simulation of gate materials with different work functions that are used in practice is performed. The charge distribution along the nanowire depending on gate length is also studied.