Circuit Monitoring Across Design Life-Cycle in 28nm FD-SOI and 40nm Bulk CMOS technologies

This paper presents circuit monitoring, reviewing different classes of silicon monitoring solutions, the specificity of each class, and where they best fit in the life-cycle of circuit design. A diversified circuit monitoring strategy is presented, that encompasses Early-Silicon versus Computer-Aided-Design (CAD) calibration, In-Die High Volume Manufacturing (HVM) testing and In-Field Dynamic monitoring, coupled with Adaptative Voltage Scaling (AVS) and/or Adaptative Body-Bias (ABB) live compensation. Illustrations of Silicon measurement and CAD simulation analysis from 40nm CMOS and 28nm FD-SOI, general purpose and automotive derivative, are presented.