Radiation-Induced Junction-Leakage Random-Telegraph-Signal

This article studies the radiation effects on the junction leakage random telegraph signal (JL-RTS). Using arrays of transistors, a statistical study of the phenomenon in MOSFETs source p-n junctions is performed and the impact of the electric field, the type of irradiation, and the source design is investigated. It appears that although JL-RTS originates both from the displacement damage dose (DDD)- and total ionizing dose (TID)-induced defects, the latter is the dominant contribution in MOSFETs sources due to an electric field enhancement (EFE). This article then completes the study with
ab initio
molecular simulations to investigate the origin of the JL-RTS. The results advocate for the adoption of the structural fluctuation model over the state charge fluctuation model to describe the origin of the phenomenon.