Transient and Steady-State Response of AlGaN/GaN Terahertz Detectors under Sinusoidal Excitation of Different Intensities

Terahertz field effect transistors (TeraFETs) based on AlGaN/GaN materials have high responsivity and sensitivity at room temperature. Based on the hydrodynamic equations, the nonlinear voltage response (transient and steady-state) of this type of THz detector was numerically calculated by finite difference method under THz excitation with different frequencies and intensities. Comparisons with the existing analytical formula and the analysis of the influence of viscosity coefficient on the response were also presented.