Traveling wave TeraFET spectrometer

We present the results of the traveling wave spectrometer simulation using the unified charge control TeraFET SPICE model. The model is in good agreement with the 32nm Si MOSFET model in TCAD. The simulations show that the detected response could be dramatically increased by feeding the phase-shifted terahertz (THz) signal into the gate and source terminals of TeraFET amplifiers with the first stage dominating the enhancement. The traveling wave TeraFET spectrometer approach enables orders of magnitude improvement in the response compared to the basic TeraFET spectrometer without drain-to-source current. When properly calibrated, it also allows for a more accurate determination of the cross-over frequency and facilitates the implementation of the frequency to digital converter.