Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs

We report on a study of the coupling of electromagnetic radiation to a strained-silicon MODFETs used as sub-THz terahertz detector. In particular, the effect of the polarization of the incoming beam as well as the role of the bonding wires on the photoresponse generated were addressed. Two tones were considered: 0.15 and 0.30THz. Results show that the device is sensitive to the beam polarization, especially when the beam polarization is perpendicular to the transistor channel under excitation at 0.15THz. We also demonstrated that the bonding wires play a preponderant role in the coupling of the incoming radiation to the channel of the FET under excitation at 0.15THz while they have a minor role at higher frequencies (0.3THz).