A GaAs pHMET dual mode, ultra-wideband low noise amplifier for 4-6GHz

This paper presents the design of a dual-mode ultra-wideband low noise amplifier in 0.25µm. In this paper, wideband input matching is achieved by the improved wideband bandpass filter. To provide high gain and the flatness of gain, the shunt-peaking technology is used. In addition, the Bypass-mode, prevent LNA broken from high power signal and involved in input and output matching, is integrated on the chip. The GaAs process was adopted and the area of the chip is 0.495mm². The measured results show that, the average gain of the LNA is 13dB, while S11 is between -28dB to -7dB within 4-6GHz. The noise figure is approximately 1.5dB. In Bypass-mode, the insertion loss (S21) is -12dB.