High Work Function Metal Electrodes for Performance Improvement of an Organic Thin Film Transistor (OTFT)

The impact of electrode work function on the performance of an organic thin film transistor (OTFT) is studied. High work function metal electrodes are a good choice for reducing the threshold voltage and reducing the injection barrier. Four different metals copper(Cu), aluminum (Al), gold (Au) and platinum (Pt) are used for gate electrode. While, silver (Ag), copper (Cu), gold (Au) and platinum (Pt) are used for source/drain electrodes. It is observed that a high work function gate metal would help in reduction of threshold voltage. Similarly, injection barrier at the source/drain junction shall be reduced when high work function electrodes are used as contact materials, thereby increasing the saturation current.