Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

A comprehensive Kubo-Greenwood modelling of FDSOI MOS devices is carried out down to deep cryogenic temperatures. It is found that a single set of mobility parameters is only needed to fit the device characteristics versus temperature for long channel devices. Instead, in short channels, the neutral scattering mobility component µN is found to decrease at small gate length due to the increased presence of neutral defects close to source/drain ends whatever the temperature.