Incorporation of silicon-carbide (SiC) nanocrystals in the MIM structures based on pulsed-DC reactively sputtered HfOx layers

Colloidal cubic SiC-NCs have been introduced into MIM structures with HfO
x
layers. The examined electrical performance of NCs-MIM structures has demonstrated improved switching characteristics, good retention, and a high HRS/LRS ratio compared to reference structures. The presented results have shown the feasibility of applying SiC-NCs in RRAM devices.