Impact for Radiated Noise by Current Smoothness with Bare SiC MOSFET and Si RC-IGBT Chips

Power device structures have been improved to shrink area of chip and to reduce power loss. The switching speed has continued increasing to reduce switching loss, and electromagnetic noise also has been increasing and shifting to higher frequency. It is important to reduce generation of noise for establishing proper operation of power converters or inverters for motor control, thus simple switching behavior should be reconsidered anew. This report describes the relationship between switching behavior and intensity of the electric field at an antenna using electromagnetic potential and wavelet transform with switching data measured by extended double pulse test for bare SiC MOSFETs and Si RC-IGBTs.