An integrated low-pass filter structure

Presented a novel method to prepare integrated low-pass MIS filters by evaporating a palladium gate electrode structure on a Si-SiO/sub 2/ substrate layer. The filter properties are achieved by structuring the gate electrode with areas of low-resistance contact pads and a high-resistance region. The high-resistance region with its clustered structure exhibits an anomalous temperature dependence for a metal. The resistivity follows an Arrhenius like thermally activated process. Gold electrode structures of the same geometrical dimensions show no measurable conductivity.