Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers

A high-permittivity (high-
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) inserted-oxide FinFET (iFinFET) structure with low-permittivity inner spacers is proposed for CMOS transistor scaling to the 3-nm technology node and beyond. The process to fabricate an iFinFET is similar to the process to fabricate a nanosheet field-effect transistor (NSFET); no additional lithography masks are needed. Unlike the NSFET and the nanowire field-effect transistor (NWFET), which each require significant spacing between the nanosheets or nanowires (NWs) to accommodate metallic gate and dielectric insulator multilayer stacks, the iFinFET requires only a single ultrathin high-
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inserted-oxide (i-oxide) layer between the NWs, allowing more NWs to be vertically stacked within the constraint of a maximum total channel height. The i-oxide layers serve to allow fringing electric fields from the gate to penetrate into the NWs to achieve improved electrostatic integrity. Simulated performance characteristics of the proposed iFinFET structure are compared against those for the FinFET, NWFET, and NSFET. The iFinFET is projected to achieve the best electrical performance when the footprint (device layout width) is less than 80 nm.