A 50–67-GHz Ultralow-Power LNA Using Double-Transformer-Coupling Technique and Self-Resonant Matching in 90-nm CMOS

In this letter, a
$V$
-band (50–75 GHz) ultralow-power low-noise amplifier (LNA) in 90-nm CMOS technology is presented. A double-transformer-coupling (DTC) technique is used to improve the gain and noise performance of the LNA. The combination of self-resonant-transformer-matching (SRTM) and gain-boosting technique is also utilized to achieve wideband output matching with high gain in a single-ended common-source (CS) amplifier. The measured small-signal gain is 16.8 dB with 3-dB bandwidth that covers from 50 to 67 GHz and the measured lowest in-band noise figure (NF) of 5.4 dB. The LNA consumes only 5.7 mW with a compact chip area of
$0.6\times 1$
mm
²
.