A 16-kb Antifuse One-Time-Programmable Memory in 5-nm High-K Metal-Gate FinFET CMOS Featuring Bootstrap High-Voltage Scheme, Read Endpoint Detection, and Pseudodifferential Sensing

This letter presents a 16-kb antifuse macro in a 5-nm high-K, metal-gate FinFET CMOS for the first time. Bootstrap high-voltage scheme (BHVS), read endpoint detection (REPD), and pseudodifferential sensing (PDS) are proposed to lower intrinsic bit error rate (BER) below 1 ppm for in-field programming and achieve ten years of data retention at 125 °C.