Experiments of a Lateral Power Device With Complementary Homogenization Field Structure

A lateral power device with complementary homogenization field structure (C-HOF) is proposed and experimentally proved in this letter. The C-HOF is formed by introducing a P-type metal insulator semiconductor (P-MIS) on the N-MIS. The complementary P/N-MIS and the PN junction between them ensure the homogenized field
${E}_{\text {hof}}$
distributions and the high breakdown voltage
${V}_{\text {B}}$
in higher doping. Based on the C-HOF mechanism, experiments were performed, which demonstrated that a significantly increased N-drift doping dose up to 6.8
$\times \,\,10^{{12}}$
cm
⁻²
can be realized in the C-HOF device. A measured low specific on-resistance
${R}_{ {{\scriptscriptstyle \text{ ON}}},\text {sp}}$
of 19.7
$\text{m}\Omega \cdot $
cm
²
was observed in the C-HOF device under a
${V}_{\text {B}}$
of 426 V, realizing a high figure of merit
$FOM = {V}_{\text {B}}^{{2}}/{R}_{ {{\scriptscriptstyle \text{ON}}},\text {sp}}$
of 9.21 MW/cm
²
and a reduction of 42.8% when compared with the theoretical value of the triple RESURF technology under the same
${V}_{\text {B}}$
.