InGaAs Nano-ridge Laser Emitting in the Telecom O-band Monolithically Grown on a 300 mm Si Wafer

The integration of III-V compound materials on Silicon is of paramount importance for the implementation of a complete Silicon Photonics platform where both active components, such as III-V laser diodes and amplifiers, and passive components are present. The monolithic growth of III-V materials on Si substrates is desirable in terms of cost efficiency, mass production and scalability. However, the large lattice mismatch between Si and most III-V compound materials of interest results in poor crystal quality for the deposited III-V film.