Reliability of Barrierless PVD Mo

We evaluate the reliability of barrierless Mo metallization on various dielectrics that are used in both BEOL and MOL integration schemes. In particular, we assess the risk of metal drift-induced failure in SiO
2
, LK3.0, SiCO and Si
3
N
4
films by performing TDDB measurements on MIM planar capacitors. We show that Mo does not drift in SiO
2
, LK3.0, and SiCO. Despite a thoroughly failure analysis no definitive conclusion could be reached for the Si
3
N
4
films.