Room-Temperature NH3 Sensors Based on Boron-Doped Graphene Oxide: Enhanced Sensing Performance by B-N Covalent Interaction

In this paper, gas sensing characteristics of Boron-doped graphene oxide(B-GO) are presented firstly. In order to detect the optimal value of boron doping, different amounts of boron (5-30 wt%) are adopt in the doping process. The results of sensing test revealed that at room temperature (20 °C) and humidity (30%), 15 wt% B-GO has the optimal sensitivity to NH
₃
. Meanwhile, the detection response and recovery time of B-GO gas sensor to NH
₃
are relatively short. Theoretical models of graphene and B-doped graphene are established, and energy change in the gas-adsorption of NH
₃
on the graphene oxide or B-doped graphene oxide is calculated. The enhanced sensing performance was ascribed to the B-doping and the formation of chemical bonds between boron and NH
₃
.